Fabrication and Characterization of DSSC/Si Tandem Solar Cell with PEDOT:PSS/ITO Buffer Layer

(Pages 7-11)
Masaya Ando, Shinya Kato, Naoki Kishi and Tetsuo Soga

Department of Electrical and Mechanical Engineering, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466 8555, Japan

DOI: http://dx.doi.org/10.15377/2410-2199.2020.07.02


In this study, dye-sensitized solar cell (DSSC)/silicon tandem solar cells were fabricated by changing the buffer layer structure. When joining two cells, a buffer layer is important to efficiently transport electrons by suppressing buffer of electrons by a potential barrier. Therefore, we used PEDOT:PSS/ITO as buffer layer structures, and measured their solar cell characteristics. As a result, it was found that the structure in which both PEDOT:PSS layer and ITO layer are stacked as buffer layers is suitable for the buffer layer of DSSC/Si tandem cells. In addition, the characteristics improved each time DMSO was added to PEDOT:PSS, and as a result, the characteristics of tandem solar cells also tended to improve. The maximum conversion efficiency (Voc = 0.78 V, Jsc = 4.87 mA / cm2, FF = 0.62, Eff = 2.35 %) was obtained when the DMSO concentration was 1%. It was suggested that conversion efficiency can be improved by improving the buffer layer.

Keywords: Photovoltaic, tandem, DSSC, PEDOT:PSS, buffer layer.